IRF830PBF JSMICRO

Symbol Micros: TIRF830 JSM
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Case : TO220
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Transistor N-Channel MOSFET; 550V; 30V; 2,6Ohm; 4A; 33W; -55°C ~ 150°C; Equivalent: IRF830PBF; IRF830PBF-BE3;
Parameters
Open channel resistance: 2,6Ohm
Max. drain current: 4A
Max. power loss: 33W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 550V
Transistor type: N-MOSFET
Manufacturer:: JSMicro Semiconductor Manufacturer part number: IRF830PBF RoHS Case style: TO220 Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,6414 0,4050 0,3207 0,2926 0,2786
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Packaging:
50
Open channel resistance: 2,6Ohm
Max. drain current: 4A
Max. power loss: 33W
Case: TO220
Manufacturer: JSMICRO
Max. drain-source voltage: 550V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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