IRFP450 HXY MOSFET

Symbol Micros: TIRFP450 HXY
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Case : TO247
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Transistor N-Channel MOSFET; 500V; 20V; 500mOhm; 14A; 190W; -55°C ~ 150°C; Equivalent: IRFP450PBF;
Parameters
Open channel resistance: 500mOhm
Max. drain current: 14A
Max. power loss: 190W
Case: TO247
Manufacturer: HXY MOSFET
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 500mOhm
Max. drain current: 14A
Max. power loss: 190W
Case: TO247
Manufacturer: HXY MOSFET
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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