IRFR8314PBF HXY MOSFET

Symbol Micros: TIRFR8314 HXY
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Case : TO252 (DPAK)
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Transistor N-Channel MOSFET; 30V; 20V; 4,8mOhm; 160A; 87W; -55°C ~ 150°C; Equivalent: IRFR8314TRPBF; SP001565102;
Parameters
Open channel resistance: 4,8mOhm
Max. drain current: 160A
Max. power loss: 87W
Case: TO252 (DPAK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Max. gate-source Voltage: 20V
Manufacturer:: HXY MOSFET Manufacturer part number: IRFR8314PBF RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6084 0,3805 0,3167 0,2825 0,2643
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Packaging:
100
Open channel resistance: 4,8mOhm
Max. drain current: 160A
Max. power loss: 87W
Case: TO252 (DPAK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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