LGE50N06D TO252 LGE

Symbol Micros: TLGE50N06D

533988

TLGE50N06D

Contractor Symbol:

Case : TO252

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Tranzystor N-MOSFET; 60V; 20V; 20mOhm; 50A; 136W; -55°C ~ 175°C; Podobny do: NDT70N06; LGE50N06D; SUD50N06-09L-E3;

Equivalents

Parameters

Open channel resistance:	20mOhm
Max. drain current:	50A
Max. power loss:	136W
Case:	TO252
Manufacturer:	LGE
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: LGE Manufacturer part number: LGE50N06D RoHS Case style: TO252t/r  

In stock:

500 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2666	0,1468	0,0972	0,0809	0,0761

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	20mOhm
Max. drain current:	50A
Max. power loss:	136W
Case:	TO252
Manufacturer:	LGE
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Equivalents

SUD50N06-09L-E3 Vishay

Symbol Micros: SUD50N06-09L-E3 Vishay Info Add to favourites Equivalents

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Item available on request

NDT70N06 TO252 KEXIN

Symbol Micros: NDT70N06 TO252 KEXIN Info Add to favourites Equivalents

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Item available on request

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