MJD31CT4G

Symbol Micros: TMJD31c ONS
Contractor Symbol:
Case : TO252
Technical drawing Add to favourites
Transistor NPN; 50; 1,56W; 100V; 3A; 3MHz; -65°C ~ 150°C; Replacement: MJD31CRLG(T&R); MJD31CT4G(T&R); MJD31CG(Tube); MJD31CTF; MJD31T4G; MJD31CT4G; MJD31CG;
Parameters
Power dissipation: 1,56W
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 50
Case: TO252
Cutoff frequency: 3MHz
Max. collector current: 3A
Max collector-emmiter voltage: 100V
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD31CT4G RoHS Case style: TO252t/r Datasheet
In stock:
1440 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5198 0,3143 0,2410 0,2181 0,2075
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Packaging:
2500
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD31CG Case style: TO252  
External warehouse:
3450 pcs.
Quantity of pcs. 375+ (Please wait for the order confirmation)
Net price (EUR) 0,3163
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Packaging:
75
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD31CT4G Case style: TO252  
External warehouse:
80000 pcs.
Quantity of pcs. 2500+ (Please wait for the order confirmation)
Net price (EUR) 0,2075
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2026-04-30
Quantity of pcs.: 2500
Power dissipation: 1,56W
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 50
Case: TO252
Cutoff frequency: 3MHz
Max. collector current: 3A
Max collector-emmiter voltage: 100V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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