MJD31CT4G

Symbol Micros: TMJD31c ONS
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Case : TO252
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Transistor NPN; 50; 1,56W; 100V; 3A; 3MHz; -65°C ~ 150°C; Replacement: MJD31CRLG(T&R); MJD31CT4G(T&R); MJD31CG(Tube); MJD31CTF; MJD31T4G; MJD31CT4G; MJD31CG;
Parameters
Power dissipation: 1,56W
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 50
Case: TO252
Cutoff frequency: 3MHz
Max. collector current: 3A
Max collector-emmiter voltage: 100V
Manufacturer:: ON-Semicoductor Manufacturer part number: MJD31CT4G RoHS Case style: TO252t/r Datasheet
In stock:
2380 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,4909 0,2959 0,2281 0,2060 0,1959
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Packaging:
2500
Power dissipation: 1,56W
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 50
Case: TO252
Cutoff frequency: 3MHz
Max. collector current: 3A
Max collector-emmiter voltage: 100V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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