MJD31CT4G

Symbol Micros: TMJD31c ONS
Contractor Symbol:
Case : TO252
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Transistor NPN; 50; 1,56W; 100V; 3A; 3MHz; -65°C ~ 150°C; Replacement: MJD31CRLG(T&R); MJD31CT4G(T&R); MJD31CG(Tube); MJD31CTF; MJD31T4G; MJD31CT4G; MJD31CG;
Parameters
Power dissipation: 1,56W
Manufacturer: ON SEMICONDUCTOR
Case: TO252
Current gain factor: 50
Cutoff frequency: 3MHz
Max. collector current: 3A
Max collector-emmiter voltage: 100V
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD31CT4G RoHS Case style: TO252t/r Datasheet
In stock:
700 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 550+
Net price (EUR) 0,4979 0,3010 0,2286 0,2069 0,1992
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Packaging:
700
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD31CT4G RoHS Case style: TO252t/r Datasheet
In stock:
550 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 550+
Net price (EUR) 0,4979 0,3010 0,2286 0,2069 0,1992
Add to comparison tool
Packaging:
550
Manufacturer:: ON-Semiconductor Manufacturer part number: MJD31CT4G RoHS Case style: TO252t/r Datasheet
In stock:
2600 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 550+
Net price (EUR) 0,4979 0,3010 0,2286 0,2069 0,1992
Add to comparison tool
Packaging:
2500
Power dissipation: 1,56W
Manufacturer: ON SEMICONDUCTOR
Case: TO252
Current gain factor: 50
Cutoff frequency: 3MHz
Max. collector current: 3A
Max collector-emmiter voltage: 100V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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