EL357N(C)(TA) 4SMD

Symbol Micros: OOPC357n3t EVL
Contractor Symbol:
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
Case: SOIC04
CTR: 200-400%
Insulation breakdown voltage: 3750V
Output type: NPN Phototransistor
Output voltage [V]: 80V
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
22000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2039 0,1125 0,0744 0,0619 0,0582
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Packaging:
3500/10500
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
995 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2039 0,1125 0,0744 0,0619 0,0582
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Packaging:
3000/9000/27000
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G Case style: SOIC04  
External warehouse:
14000 pcs.
Quantity of pcs. 7000+ (Please wait for the order confirmation)
Net price (EUR) 0,0755
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Packaging:
3500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: EVERSPIN Manufacturer part number: EL357N(C)(TA)-G Case style: SOIC04  
External warehouse:
1250 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 0,0951
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Case: SOIC04
CTR: 200-400%
Insulation breakdown voltage: 3750V
Output type: NPN Phototransistor
Output voltage [V]: 80V