EL357N(C)(TA) 4SMD
Symbol Micros:
OOPC357n3t EVL
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
| CTR: | 200-400% |
| Case: | SOIC04 |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 3750V |
| Output voltage [V]: | 80V |
| CTR: | 200-400% |
| Case: | SOIC04 |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 3750V |
| Output voltage [V]: | 80V |
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