EL357N(C)(TA) 4SMD

Symbol Micros: OOPC357n3t EVL
Contractor Symbol:
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage: 80V
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
1000 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2213 0,1210 0,0794 0,0686 0,0632
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Packaging:
1000
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
1500 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2213 0,1224 0,0813 0,0679 0,0632
Add to comparison tool
Packaging:
1500
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
21000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2213 0,1224 0,0813 0,0679 0,0632
Add to comparison tool
Packaging:
3500
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
3995 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2213 0,1224 0,0813 0,0679 0,0632
Add to comparison tool
Packaging:
3000
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage: 80V