EL357N(C)(TA) 4SMD

Symbol Micros: OOPC357n3t EVL
Contractor Symbol:
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage [V]: 80V
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
32500 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2081 0,1148 0,0760 0,0632 0,0594
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Packaging:
3500
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
995 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2081 0,1148 0,0760 0,0632 0,0594
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Packaging:
3000/9000/27000
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
2000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2081 0,1148 0,0760 0,0632 0,0594
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Packaging:
2000
Manufacturer:: EVERSPIN Manufacturer part number: EL357N(C)(TA)-G Case style: SOIC04  
External warehouse:
2250 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 0,0952
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage [V]: 80V