EL357N(C)(TA) 4SMD

Symbol Micros: OOPC357n3t EVL
Contractor Symbol:
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage [V]: 80V
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
22000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2073 0,1144 0,0757 0,0630 0,0592
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Packaging:
3500/10500
Manufacturer:: EVERLIGHT Manufacturer part number: EL357N(C)(TA)-G RoHS Case style: SOIC04t/r Datasheet
In stock:
995 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2073 0,1144 0,0757 0,0630 0,0592
Add to comparison tool
Packaging:
3000/9000/27000
CTR: 200-400%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage [V]: 80V