EL357N(C)(TA) 4SMD
Symbol Micros:
OOPC357n3t EVL
Case : SOIC04
single CTR 200-400% Vce 80V Uiso 3,75kV NPN Phototransistor
Parameters
| CTR: | 200-400% |
| Case: | SOIC04 |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 3750V |
| Output voltage: | 80V |
Manufacturer:: EVERLIGHT
Manufacturer part number: EL357N(C)(TA)-G RoHS
Case style: SOIC04t/r
Datasheet
In stock:
1000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2213 | 0,1210 | 0,0794 | 0,0686 | 0,0632 |
Manufacturer:: EVERLIGHT
Manufacturer part number: EL357N(C)(TA)-G RoHS
Case style: SOIC04t/r
Datasheet
In stock:
1500 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2213 | 0,1224 | 0,0813 | 0,0679 | 0,0632 |
| CTR: | 200-400% |
| Case: | SOIC04 |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 3750V |
| Output voltage: | 80V |
Add Symbol
Cancel
All Contractor Symbols