LTV817S-A smd

Symbol Micros: OOPC817altvs CT

503711

OOPC817altvs CT

Contractor Symbol:

Case : PDIP04smd

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single CTR 160% Vce 35V Uiso 5,0kV NPN Phototransistor FOD817AS, FOD817ASD, LTV-817S-TA1-A

Parameters

CTR:	160%
Case:	PDIP04smd
Output type:	NPN Phototransistor
Insulation breakdown voltage:	0,5kV
Output voltage:	35V

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Estimated date:
2025-11-20

Quantity of pcs.: 1500

• Parameters

CTR:	160%
Case:	PDIP04smd
Output type:	NPN Phototransistor
Insulation breakdown voltage:	0,5kV
Output voltage:	35V

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