FOD817AS

Symbol Micros: OOPC817as FAI
Contractor Symbol:
Case : PDIP04smd
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Single-Channel CTR 80-160% Vce 70V Uiso 5,0kV NPN Phototransistor FOD817ASD
Parameters
CTR: 80-160%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817AS RoHS Case style: PDIP04smd Datasheet
In stock:
205 pcs.
Quantity of pcs. 3+ 20+ 100+ 200+ 1000+
Net price (EUR) 0,3382 0,1864 0,1464 0,1388 0,1301
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Packaging:
100
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817ASD Case style: PDIP04smd  
External warehouse:
360000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1301
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817ASD Case style: PDIP04smd  
External warehouse:
132000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1301
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
CTR: 80-160%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V

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