FOD817AS

Symbol Micros: OOPC817as FAI
Contractor Symbol:
Case : PDIP04smd
Technical drawing Add to favourites
Single-Channel CTR 80-160% Vce 70V Uiso 5,0kV NPN Phototransistor FOD817ASD
Parameters
CTR: 80-160%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage [V]: 70V
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817AS RoHS Case style: PDIP04smd Datasheet
In stock:
205 pcs.
Quantity of pcs. 3+ 20+ 100+ 200+ 1000+
Net price (EUR) 0,3389 0,1868 0,1467 0,1391 0,1304
Add to comparison tool
Packaging:
100
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817ASD Case style: PDIP04smd  
External warehouse:
16000 pcs.
Quantity of pcs. 4000+ (Please wait for the order confirmation)
Net price (EUR) 0,1304
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817ASD Case style: PDIP04smd  
External warehouse:
544000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,1304
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
CTR: 80-160%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage [V]: 70V

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols