FOD817B3S

Symbol Micros: OOPC817b3s FAI
Contractor Symbol:
Case : PDIP04smd
Technical drawing Add to favourites
Single-Ch CTR 130-260% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817B3SD
Parameters
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817B3SD RoHS Case style: PDIP04smd Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,5605 0,3520 0,2918 0,2594 0,2432
Add to comparison tool
Packaging:
100
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols