FOD817BS

Symbol Micros: OOPC817bs FAI
Contractor Symbol:
Case : PDIP04smd
Single-Channel CTR 130-360% Vce 70V Uiso 5,0kV NPN Phototransistor FOD817BSD
Parameters
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817BS RoHS Case style: PDIP04smd Datasheet
In stock:
80 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2697 0,1433 0,1112 0,1025 0,0983
Add to comparison tool
Packaging:
100
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V