FOD817C3S

Symbol Micros: OOPC817c3s FAI
Contractor Symbol:
Case : PDIP04smd
Single-Ch CTR 200-400% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817C3SD
Parameters
CTR: 200-400%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage [V]: 70V
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817C3SD RoHS Case style: PDIP04smd Datasheet
In stock:
23 pcs.
Quantity of pcs. 3+ 10+ 23+ 115+ 483+
Net price (EUR) 0,3389 0,2204 0,1792 0,1422 0,1304
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Packaging:
23
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817C3SD RoHS Case style: PDIP04smd Datasheet
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3389 0,2221 0,1590 0,1391 0,1304
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Packaging:
200
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817C3SD Case style: PDIP04smd  
External warehouse:
7000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,1304
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
CTR: 200-400%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage [V]: 70V