FOD817C3S
Symbol Micros:
OOPC817c3s FAI
Case : PDIP04smd
Single-Ch CTR 200-400% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817C3SD
Parameters
| CTR: | 200-400% |
| Case: | PDIP04smd |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 5000V |
| Output voltage: | 70V |
| CTR: | 200-400% |
| Case: | PDIP04smd |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 5000V |
| Output voltage: | 70V |
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