FOD817C3S
Symbol Micros:
OOPC817c3s FAI
Case : PDIP04smd
Single-Ch CTR 200-400% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817C3SD
Parameters
| CTR: | 200-400% |
| Case: | PDIP04smd |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 5000V |
| Output voltage [V]: | 70V |
Manufacturer:: ON-Semiconductor
Manufacturer part number: FOD817C3SD RoHS
Case style: PDIP04smd
Datasheet
In stock:
23 pcs.
| Quantity of pcs. | 3+ | 10+ | 23+ | 115+ | 483+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3404 | 0,2214 | 0,1800 | 0,1428 | 0,1309 |
Manufacturer:: ON-Semiconductor
Manufacturer part number: FOD817C3SD RoHS
Case style: PDIP04smd
Datasheet
In stock:
200 pcs.
| Quantity of pcs. | 3+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3404 | 0,2230 | 0,1597 | 0,1397 | 0,1309 |
Manufacturer:: ON-Semiconductor
Manufacturer part number: FOD817C3SD
Case style: PDIP04smd
External warehouse:
7000 pcs.
| Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1309 |
| CTR: | 200-400% |
| Case: | PDIP04smd |
| Output type: | NPN Phototransistor |
| Insulation breakdown voltage: | 5000V |
| Output voltage [V]: | 70V |
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