FOD817C3S

Symbol Micros: OOPC817c3s FAI
Contractor Symbol:
Case : PDIP04smd
Single-Ch CTR 200-400% Vce 70V Uiso 5,0kV NPN Phototr. DIN EN/IEC60747-5-5 opt. FOD817C3SD
Parameters
CTR: 200-400%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817C3SD RoHS Case style: PDIP04smd Datasheet
In stock:
23 pcs.
Quantity of pcs. 3+ 10+ 23+ 115+ 483+
Net price (EUR) 0,3171 0,2058 0,1672 0,1327 0,1217
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Packaging:
23
CTR: 200-400%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 70V