LTV817S-D smd

Symbol Micros: OOPC817dltvs CT

503717

OOPC817dltvs CT

Contractor Symbol:

Case : DIP04smd

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Single-Channel CTR 300-600% Vce 35V Uiso 5kV FOD817DS, LTV-817S-TA1-D

Parameters

CTR:	300-600%
Case:	DIP04smd
Output type:	NPN Phototransistor
Insulation breakdown voltage:	5000V
Output voltage:	35V

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Estimated date:
2025-11-20

Quantity of pcs.: 1500

• Parameters

CTR:	300-600%
Case:	DIP04smd
Output type:	NPN Phototransistor
Insulation breakdown voltage:	5000V
Output voltage:	35V

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