FOD817S

Symbol Micros: OOPC817s FAI
Contractor Symbol:
Case : PDIP04smd
Single-Channel CTR 50-600% Vce 70V Uiso 5,0kV NPN Phototransistor FOD817SD
Parameters
Case: PDIP04smd
CTR: 50-600%
Insulation breakdown voltage: 5000V
Output type: NPN Phototransistor
Output voltage [V]: 70V
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817S RoHS Case style: PDIP04smd Datasheet
In stock:
11 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3316 0,1828 0,1436 0,1331 0,1276
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Packaging:
100
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817SD RoHS Case style: PDIP04smd Datasheet
In stock:
100 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3316 0,1828 0,1436 0,1331 0,1276
Add to comparison tool
Packaging:
100
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817SD Case style: PDIP04smd  
External warehouse:
6000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,1276
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817S Case style: PDIP04smd  
External warehouse:
11600 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,1276
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Case: PDIP04smd
CTR: 50-600%
Insulation breakdown voltage: 5000V
Output type: NPN Phototransistor
Output voltage [V]: 70V