TLP185(GR,SE(T Toshiba

Symbol Micros: OOTLP185gr-se

108436

OOTLP185gr-se

Contractor Symbol:

Case : SO 4

Datasheet

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single channel CTR 100-300% Vce 80V Uiso 3,75kV NPN Phototransistor TLP185(GR,SE(T; TLP185(GR-TPL,SE(T; TLP185(GR-TPR,SE(T; TLP185(GR-TPR,E(O;

Parameters

CTR:	100-300%
Case:	SO 6
Output type:	Phototransistor
Insulation breakdown voltage:	3750V
Output voltage:	80V

All parameters

         

 

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• Parameters

CTR:	100-300%
Case:	SO 6
Output type:	Phototransistor
Insulation breakdown voltage:	3750V
Output voltage:	80V

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