AT45DB081E-SSHN SO8(0.15")

AT45DB081E - serial, SPI-compatible DataFlash memory with a capacity of 8 megabits (+additional 256 kilobits),
powered by as low as 1.7 V.

Features:

• Single power supply voltage range from 1.7 V – 3.6 V
• SPI interface compatibility
   - supports SPI modes 0 and 3
   - compatible with RapidS™
• Continuous read of the entire memory contents
   - up to 133 MHz
   - energy-efficient read mode up to 20 MHz
   - maximum read time (clock-to-output, tV) 6 ns
• User-configurable page size
   - 256 bytes per page
   - 264 bytes per page (default value)
   - option for factory pre-setting the page size to 256 bytes
• One SRAM data buffer (256/264 bytes)
• Flexible programming options
   - direct programming of main memory at byte or page level (from 1 to 256/264 bytes)
   - write buffering
   - page copy buffer to main memory
• Flexible erase options
   - erase pages (256/264 bytes)
   - erase blocks (2 kB)
   - erase sectors (64 kB)
   - full-chip erase (8 Mb)
• Advanced hardware and software data protection mechanisms
   - protection of individual sectors
   - ability to lock individual sectors (set them to read-only mode)
• Security register of 128 bytes, which can be programmed only once
   - 64 bytes containing a factory-programmed unique identifier
   - 64 bytes for user data
• Hardware and software reset
• Manufacturer and device ID read according to the JEDEC standard
• Low power dissipation
   - current consumption in ultra-deep power-down mode 400 nA (typical)
   - current consumption in deep power-down mode 4.5 μA (typical)
   - current consumption in standby mode 25 μA (typically at 20 MHz)
   - current consumption during read 8 mA (typical)
• Endurance: at least 100,000 program/erase cycles per page
• Data retention: 20 years
• Compliance with industrial operating temperature range
• Availability of eco-friendly options (lead-free, halogen-free, RoHS compliant)
   - 8-pin SOIC package (0.150ʺ width, 0.208" length)
   - 8-pad ultra-thin DFN package (5 x 6 x 0.6 mm)

Description

Adesto® AT45DB081E is a serial Flash memory with sequential access, powered by a voltage from 1.7 V. It is an ideal choice for a wide range of devices that require storage for voice, images, program code, or data. AT45DB081E is also compatible with the RapidS serial interface, which is important for applications requiring very high-speed operation. The 8,650,752 bits of memory are divided into 4,096 pages, each containing 256 or 264 bytes. In addition to the main memory, AT45DB081E also includes a single 256/264-byte SRAM buffer. This buffer can serve as additional paging memory, and through a three-phase operation, read-modify-write, allows easy implementation of EEPROM emulation, providing access to data at the bit or byte level. Unlike traditional Flash memories with random access, equipped with multiple address lines and parallel interfaces, Adesto DataFlash® memories use a serial interface and sequential access.

Its simplicity leads to a drastic reduction in the number of required pins, eases trace design, improves system reliability, reduces EMI interference, and allows the memory to be placed in a compact package. The device has been optimized for use in many commercial and industrial solutions where high component density, small number of pins, low supply voltage, and low power consumption are essential.

AT45DB081E does not require high-voltage programming, allowing for fast in-system reprogramming. Erasing and programming, as well as reading, occur with a supply voltage range from 1.7 V to 3.6 V. AT45DB081E is activated via the Chip Select (CS) pin and is accessed using a three-wire interface: Serial Input (SI), Serial Output (SO), and Serial Clock (SCK). Timing control for all programming and erasing operations is automatically handled.