628512/10-3.3V TSOP2-44

K6R4008V1D-UI10 - SRAM memory manufactured using CMOS technology. Data is stored and retrieved asynchronously in the form of 8-bit words. The memory operating mode is selected using the following signals: Chip Select (~CS, memory activation), Write Enable (~WE, write activation), Output Enable (~OE, read activation).

Selected Features:
- Capacity: 4Mbit;
- Organization: 8-bit;
- Access time: 10ns;
- TTL-compatible inputs/outputs;
- Three-state outputs – allowing multiple memory chips to be connected together;
- Power consumption:
Active mode: 75mA max;
Standby mode: 20mA max (TTL), 5mA max (CMOS);
- Supply voltage: 3.3V;
- Operating temperature: -40÷85°C;

This memory is used in applications requiring high data storage density and fast processing speed.