PTP80N06 TO-220 HT SEMI

Symbol Micros: TPTP80N06 HTSEMI
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Case : TO220
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Transistor N-Channel MOSFET; 55V; 20V; 8mOhm; 110A; 200W; -55°C ~ 175°C; Equivalent: STP55NF06; IRFZ44ZPBF; IRF3205PBF; IRF 3205 PBF; IRF3205; YFW120N06AC; PTP12HN06; MOT110N06F; D3205;
Parameters
Open channel resistance: 8mOhm
Max. drain current: 110A
Max. power loss: 200W
Case: TO220
Manufacturer: HT SEMI
Max. drain-source voltage: 55V
Max. gate-source Voltage: 20V
         
 
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Open channel resistance: 8mOhm
Max. drain current: 110A
Max. power loss: 200W
Case: TO220
Manufacturer: HT SEMI
Max. drain-source voltage: 55V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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