SI2301BDS
Symbol Micros:
TSI2301bds
Case : SOT23
Transistor P-Channel MOSFET; 20V; 8V; 150mOhm; 2,2A; 700mW; -55°C ~ 150°C; Equivalent: SI2301BDS-T1-E3; SI2301BDS-T1-GE3;
Parameters
| Open channel resistance: | 150mOhm |
| Max. drain current: | 2,2A |
| Max. power loss: | 700mW |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Open channel resistance: | 150mOhm |
| Max. drain current: | 2,2A |
| Max. power loss: | 700mW |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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