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SI2308BDS

Symbol Micros: TSI2308bds

Case : SOT23

Transistor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Replacement: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND; SI2308BDS-T1-BE3; TSI2308BDS-T1-BE3;

Parameters

Open channel resistance:	192mOhm
Max. power loss:	1,66W
Max. drain current:	2,3A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

Manufacturer:: Vishay Manufacturer part number: SI2308BDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

5945 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3453	0,1902	0,1496	0,1384	0,1328

Parameters

Open channel resistance:	192mOhm
Max. power loss:	1,66W
Max. drain current:	2,3A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1668	0,0793	0,0446	0,0338	0,0303

Quantity of pcs.	3+	10+	40+	150+	750+
Net price (EUR)	0,2567	0,1631	0,1181	0,1010	0,0931

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1076	0,0492	0,0268	0,0201	0,0179

Quantity of pcs.	10+	50+	200+	1000+	5000+
Net price (EUR)	0,0957	0,0378	0,0223	0,0164	0,0147

SI2308BDS

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