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SI2308BDS

Symbol Micros: TSI2308bds

Case : SOT23

Transistor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Replacement: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND; SI2308BDS-T1-BE3; TSI2308BDS-T1-BE3;

Parameters

Open channel resistance:	192mOhm
Max. power loss:	1,66W
Max. drain current:	2,3A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

Manufacturer:: Siliconix Manufacturer part number: SI2308BDS-T1-GE3 RoHS Case style: SOT23t/r

In stock:

0 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3486	0,1920	0,1510	0,1397	0,1340

Manufacturer:: Vishay Manufacturer part number: SI2308BDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

6000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3486	0,1920	0,1510	0,1397	0,1340

Manufacturer:: Vishay Manufacturer part number: SI2308BDS-T1-GE3 Case style: SOT23

External warehouse:

4832 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,1715

Parameters

Open channel resistance:	192mOhm
Max. power loss:	1,66W
Max. drain current:	2,3A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1684	0,0801	0,0450	0,0342	0,0306

Quantity of pcs.	3+	10+	40+	150+	750+
Net price (EUR)	0,2591	0,1647	0,1192	0,1020	0,0940

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1086	0,0497	0,0271	0,0203	0,0181

Quantity of pcs.	10+	50+	200+	1000+	5000+
Net price (EUR)	0,0966	0,0382	0,0225	0,0166	0,0148

SI2308BDS

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