SI2308BDS 

Symbol Micros: TSI2308bds
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Case : SOT23
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Tranzystor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Substitute: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND;
Parameters
Open channel resistance: 192mOhm
Max. drain current: 2,3A
Max. power loss: 1,66W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 192mOhm
Max. drain current: 2,3A
Max. power loss: 1,66W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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