MOT10N65F TO-220F

Symbol Micros: T10N65F MOT

529588

T10N65F MOT

Contractor Symbol:

Case : TO220iso

Datasheet

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TRANSISTOR ODPOWIEDNIK: MAGNACHIP MDF10N65BTH; STP10NK60ZFP;

Parameters

Open channel resistance:	800mOhm
Max. drain current:	10A
Max. power loss:	50W
Case:	TO220iso
Manufacturer:	MOT
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: MOT Manufacturer part number: MOT10N65F RoHS Case style: TO220iso  

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5876	0,3549	0,2727	0,2468	0,2346

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Packaging:
50/200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	800mOhm
Max. drain current:	10A
Max. power loss:	50W
Case:	TO220iso
Manufacturer:	MOT
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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