12N65 HXY MOSFET

Symbol Micros: T12N65 HXY
Contractor Symbol:
Case : TO220iso
Transistor N-Channel MOSFET; 650V; 30V; 800mOhm; 12A; 42W; -55°C ~ 150°C; Equivalent: 12N65-LGE; PTA12N65; 12N65F; DM12N65E; LNE12N65; SW12N65; LND12N65; LNF12N65; PTF12N65; SLF12N65C; CEF12N65; RS12N65F; AOTF12N65; BRFL12N65; SMF12N65; LNDN12N65; LNC12N65; HFS12N65S; SMIRF12N65T2TL; FHP12N65C; TSF12N65M; KIA12N65H; FIR12N65FG; SE12N65F; JSC12N65FT; SVF12N65F; TMA12N65H; SPC12N65G; FIR12N65FG; IXFP12N65X2M; JSC12N65FT; SMIRF12N65T1TL; CS12N65FA9H; SVF12N65CKL; CS12N65FA9R; SVF12N65F(S); 12N65KL-TF1-T; JSC12N65FC-220MF; JSC12N65FT-220MF;
Parameters
Open channel resistance: 800mOhm
Max. drain current: 12A
Max. power loss: 42W
Case: TO220iso
Manufacturer: HXY MOSFET
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: 12N65 RoHS Case style: TO220iso Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,8419 0,5283 0,4127 0,3891 0,3655
Add to comparison tool
Packaging:
50/100
Open channel resistance: 800mOhm
Max. drain current: 12A
Max. power loss: 42W
Case: TO220iso
Manufacturer: HXY MOSFET
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT