2N5551

Symbol Micros: T2N5551
Contractor Symbol:
Case : TO92
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NPN 600mA 160V 625mW
Parameters
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Case: TO92
Current gain factor: 250
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
         
 
Item available on request
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Case: TO92
Current gain factor: 250
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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