2N5551

Symbol Micros: T2N5551
Contractor Symbol:
Case : TO92
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NPN 600mA 160V 625mW
Parameters
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Current gain factor: 250
Case: TO92
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
Manufacturer:: MIC Manufacturer part number: 2N5551 RoHS Case style: TO92bul  
In stock:
500 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 5000+
Net price (EUR) 0,0796 0,0315 0,0186 0,0137 0,0122
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Packaging:
1000/5000
Manufacturer:: ON-Semiconductor Manufacturer part number: 2N5551BU Case style: TO92  
External warehouse:
20000 pcs.
Quantity of pcs. 10000+ (Please wait for the order confirmation)
Net price (EUR) 0,0333
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Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: 2N5551TA Case style: TO92  
External warehouse:
32000 pcs.
Quantity of pcs. 4000+ (Please wait for the order confirmation)
Net price (EUR) 0,0333
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2026-05-20
Quantity of pcs.: 5000
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Current gain factor: 250
Case: TO92
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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