2N5551

Symbol Micros: T2N5551
Contractor Symbol:
Case : TO92
NPN 600mA 160V 625mW
Parameters
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Current gain factor: 250
Case: TO92
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
         
 
Item available on request
         
 
Item in delivery
Estimated date:
2026-05-30
Quantity of pcs.: 5000
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Current gain factor: 250
Case: TO92
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN