2N5551

Symbol Micros: T2N5551
Contractor Symbol:
Case : TO92
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NPN 600mA 160V 625mW
Parameters
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Current gain factor: 250
Case: TO92
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
Manufacturer:: MIC Manufacturer part number: 2N5551 RoHS Case style: TO92bul  
In stock:
3000 pcs.
Quantity of pcs. 10+ 50+ 200+ 1000+ 5000+
Net price (EUR) 0,0792 0,0313 0,0185 0,0136 0,0122
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Packaging:
1000/5000
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N5551BU Case style: TO92  
External warehouse:
10000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0356
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Packaging:
10000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N5551TA Case style: TO92  
External warehouse:
10000 pcs.
Quantity of pcs. 10000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0348
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Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: 2N5551TA Case style: TO92  
External warehouse:
18000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0356
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 630mW
Manufacturer: DISCRETE SEMICONDUCTORS
Current gain factor: 250
Case: TO92
Cutoff frequency: 300MHz
Max. collector current: 300mA
Max collector-emmiter voltage: 160V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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