2N7000 TO92(ammo, formed PIN) LGE

Symbol Micros: T2N7000 f

76313

T2N7000 f

Contractor Symbol:

Case : TO92ammoformed

Datasheet

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N-MOSFET 190mA 60V 250mW

Parameters

Open channel resistance:	5,3Ohm
Max. drain current:	200mA
Max. power loss:	400mW
Case:	TO92ammoformed
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: LGE Manufacturer part number: 2N7000 RoHS Case style: TO92bul  

In stock:

5380 pcs.

Quantity of pcs.	5+	30+	200+	1000+	5000+
Net price (EUR)	0,1524	0,0611	0,0355	0,0296	0,0277

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Packaging:
1000/10000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5,3Ohm
Max. drain current:	200mA
Max. power loss:	400mW
Case:	TO92ammoformed
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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