2N7000 TO92(ammo, formed PIN) LGE

Symbol Micros: T2N7000 f
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Case : TO92ammoformed
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N-MOSFET 190mA 60V 250mW
Parameters
Open channel resistance: 5,3Ohm
Max. drain current: 200mA
Max. power loss: 400mW
Case: TO92ammoformed
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: LGE Manufacturer part number: 2N7000 RoHS Case style: TO92bul  
In stock:
6870 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 5000+
Net price (EUR) 0,1664 0,0665 0,0386 0,0323 0,0302
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Packaging:
1000/10000
Open channel resistance: 5,3Ohm
Max. drain current: 200mA
Max. power loss: 400mW
Case: TO92ammoformed
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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