2N7000

Symbol Micros: T2N7000 LGE
Contractor Symbol:
Case : TO92
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Transistor N-Channel MOSFET; 60V; 6Ohm; 200mA; 350mW; -55°C ~ 150°C; 2N7000-LGE;
Parameters
Open channel resistance: 6Ohm
Max. drain current: 200mA
Max. power loss: 350mW
Case: TO92
Manufacturer: LGE
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: LGE Manufacturer part number: 2N7000 RoHS Case style: TO92bul Datasheet
In stock:
1100 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 5000+
Net price (EUR) 0,1695 0,0677 0,0395 0,0329 0,0308
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Packaging:
1000
Open channel resistance: 6Ohm
Max. drain current: 200mA
Max. power loss: 350mW
Case: TO92
Manufacturer: LGE
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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