2N7002,215

Symbol Micros: T2N7002 NXP
Contractor Symbol:
Case : SOT23
Transistor N-Channel MOSFET; 60V; 30V; 5Ohm; 300mA; 830mW; -65°C~150°C; 2N7002.215;
Parameters
Open channel resistance: 5Ohm
Max. drain current: 300mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: NXP Manufacturer part number: 2N7002,215 RoHS Case style: SOT23t/r Datasheet
In stock:
178 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1334 0,0612 0,0332 0,0249 0,0222
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Packaging:
3000
Manufacturer:: Nexperia Manufacturer part number: 2N7002,215 Case style: SOT23  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0359
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: 2N7002,215 Case style: SOT23  
External warehouse:
21000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0241
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 5Ohm
Max. drain current: 300mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD
Detailed description

2N7002 N-Channel MOSFET Transistor SOT-23 NXP

The 2N7002 transistor is one of the most recognizable and widely used N-channel MOSFET field-effect transistors in low-power digital and analog electronics. Manufactured by NXP and supplied in a miniature SOT-23 package, it is a key component wherever high switching speed and efficient handling of low-current signals are required. Its architecture allows for easy control from microcontroller logic-level outputs.

Key Features and Specifications of the 2N7002 Transistor

The 2N7002 transistor is valued for its ease of use and reliability, making it a staple in designs that require miniaturization and high performance. The SOT-23 package ensures a minimal PCB footprint and is ideal for surface-mount assembly.

The most important technical parameters of the 2N7002 transistor include:

  • Transistor type: N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
  • Maximum drain-source voltage (VDS): 60 V
  • Continuous drain current (ID): 115 mA
  • On-state resistance (RDS(on)): low (typ. 7.5 Ω at VGS = 5 V)
  • Gate threshold voltage (VGS(th)): low, enabling control from digital logic levels
  • Package: SOT-23 (SMD)

This set of parameters, including the low gate threshold voltage, makes the 2N7002 transistor ideal for interfacing low-current digital circuits with components powered by higher supply voltages.

Typical Applications of the 2N7002 Transistor

Thanks to its high switching speed and compatibility with logic-level voltages, this N-channel MOSFET is used in:

  • fast digital signal switching
  • LED driving circuits
  • low-power amplifiers and buffer stages
  • logic interfaces and voltage level translators
  • relay control circuits and small motor drivers

Due to its proven architecture, this transistor is commonly chosen for prototyping as well as for mass production of electronic devices.

The 2N7002 transistor in the SOT-23 package, available from Micros, is a verified NXP component that ensures high reliability and stable parameters in critical switching circuits.