2N7002DWH6327

Symbol Micros: T2N7002dwh6327
Contractor Symbol:
Case : SOT363
2xN-MOSFET 60V 0.3A 2N7002DWH6327XTSA1
Parameters
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: INFINEON
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Manufacturer:: Infineon Manufacturer part number: 2N7002DWH6327XTSA1 Case style: SOT363  
External warehouse:
900 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0498
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: 2N7002DWH6327XTSA1 Case style: SOT363  
External warehouse:
393000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0331
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: 2N7002DWH6327XTSA1 Case style: SOT363  
External warehouse:
4308000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0317
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: INFINEON
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD