2N7002E

Symbol Micros: T2N7002E ANB

347224

T2N7002E ANB

Contractor Symbol:

Case : SOT23-3

Datasheet

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N-Channel 60V 300mA 2.5V @ 250uA 3Ω @ 500mA,10V 350mW SOT-23(SOT-23-3) MOSFET RoHS 2N7002EY;

Parameters

Open channel resistance:	3Ohm
Max. drain current:	300mA
Max. power loss:	350mW
Case:	SOT23-3
Manufacturer:	Anbonsemi
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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Estimated date:
2025-11-28

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	300mA
Max. power loss:	350mW
Case:	SOT23-3
Manufacturer:	Anbonsemi
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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