2N7002E-T1-GE3

Symbol Micros: T2N7002E-T1-GE3

495251

T2N7002E-T1-GE3

Contractor Symbol:

Case : SOT23

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Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 2N7002E-T1-GE3

Parameters

Open channel resistance:	4Ohm
Max. drain current:	240mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	4Ohm
Max. drain current:	240mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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