2N7002E-T1-GE3

Symbol Micros: T2N7002E-T1-GE3
Contractor Symbol:
Case : SOT23
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 2N7002E-T1-GE3
Parameters
Open channel resistance: 4Ohm
Max. drain current: 240mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 4Ohm
Max. drain current: 240mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD