2N7002ET1G
Symbol Micros:
T2N7002et1g
Case : SOT23-3
N-MOSFET 60V 260mA
Parameters
| Open channel resistance: | 3Ohm |
| Max. drain current: | 310mA |
| Max. power loss: | 420mW |
| Case: | SOT23-3 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: 2N7002ET1G RoHS
Case style: SOT23-3 t/r
Datasheet
In stock:
3000 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1886 | 0,0896 | 0,0504 | 0,0383 | 0,0343 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: 2N7002ET1G
Case style: SOT23-3
External warehouse:
816000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1127 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: 2N7002ET1G
Case style: SOT23-3
External warehouse:
531000 pcs.
| Quantity of pcs. | 9000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0343 |
| Open channel resistance: | 3Ohm |
| Max. drain current: | 310mA |
| Max. power loss: | 420mW |
| Case: | SOT23-3 |
| Manufacturer: | ON SEMICONDUCTOR |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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