2N7002ET1G

Symbol Micros: T2N7002et1g

113717

T2N7002et1g

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

N-MOSFET 60V 260mA

Parameters

Open channel resistance:	3Ohm
Max. drain current:	310mA
Max. power loss:	420mW
Case:	SOT23-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7002ET1G RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1882	0,0894	0,0502	0,0382	0,0342

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7002ET1G Case style: SOT23-3  

External warehouse:

3582000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0342

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	310mA
Max. power loss:	420mW
Case:	SOT23-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.