2N7002ET1G

Symbol Micros: T2N7002et1g

113717

T2N7002et1g

Contractor Symbol:

Case : SOT23-3

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N-MOSFET 60V 260mA

Parameters

Open channel resistance:	3Ohm
Max. drain current:	310mA
Max. power loss:	420mW
Case:	SOT23-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	310mA
Max. power loss:	420mW
Case:	SOT23-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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