2N7002H6327XTSA2 Infineon

Symbol Micros: T2N7002h
Contractor Symbol:
Case : SOT23t/r
Technical drawing Add to favourites
N-MOSFET 60V 0.3A
Parameters
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: 2N7002H6327XTSA2 RoHS Case style: SOT363 t/r Datasheet
In stock:
0 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2213 0,1123 0,0681 0,0539 0,0492
Add to comparison tool
Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: 2N7002H6327XTSA2 Case style: SOT23t/r  
External warehouse:
189000 pcs.
Quantity of pcs. 18000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0492
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols