2N7002H SOT23(T/R) LGE

Symbol Micros: T2N7002h LGE

534627

T2N7002h LGE

Contractor Symbol:

Case : SOT23

Datasheet

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Tranzystor N-Channel MOSFET; 60V; 20V; 4Ohm; 300mA; 350mW; -55°C ~ 150°C;

Parameters

Open channel resistance:	4Ohm
Max. drain current:	300mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	LGE
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: LGE Manufacturer part number: 2N7002H RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1132	0,0520	0,0284	0,0211	0,0189

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4Ohm
Max. drain current:	300mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	LGE
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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