2N7002KT1G

Symbol Micros: T2N7002kt1ge3

113711

T2N7002kt1ge3

Contractor Symbol:

Case : SOT23

Datasheet

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Tranzystor N-Channel MOSFET; 60V; 20V; 4Ohm; 300mA; 350mW; -55°C ~ 150°C; Odpowiednik: 2N7002KT1G; 2N7002K-T1-E3; 2N7002K-T1-GE3;

Parameters

Open channel resistance:	4Ohm
Max. drain current:	300mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: 2N7002KT1G RoHS Case style: SOT23t/r  

In stock:

980 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1421	0,0674	0,0381	0,0289	0,0258

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4Ohm
Max. drain current:	300mA
Max. power loss:	350mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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