2N7002NXBKR 

Symbol Micros: T2N7002NXBKR
Contractor Symbol:
Case : SOT23
2N7002NXBK/SOT23/TO-236AB Transistors - FETs, MOSFETs - Single
Parameters
Open channel resistance: 2,8Ohm
Max. drain current: 270mA
Max. power loss: 310mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: NXP Manufacturer part number: 2N7002NXBKR RoHS Case style: SOT23t/r Datasheet
In stock:
1000 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 5000+
Net price (EUR) 0,1199 0,0459 0,0259 0,0214 0,0200
Add to comparison tool
Packaging:
1000
Manufacturer:: Nexperia Manufacturer part number: 2N7002NXBKR Case style: SOT23  
External warehouse:
18880 pcs.
Quantity of pcs. 9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0200
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: 2N7002NXBKR Case style: SOT23  
External warehouse:
33000 pcs.
Quantity of pcs. 9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0200
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,8Ohm
Max. drain current: 270mA
Max. power loss: 310mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD