2N7002NXBKR 

Symbol Micros: T2N7002NXBKR

390296

T2N7002NXBKR

Contractor Symbol:

Case : SOT23

Datasheet

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2N7002NXBK/SOT23/TO-236AB Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	2,8Ohm
Max. drain current:	270mA
Max. power loss:	310mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: NXP Manufacturer part number: 2N7002NXBKR RoHS Case style: SOT23t/r Datasheet

In stock:

1000 pcs.

Quantity of pcs.	5+	30+	200+	1000+	5000+
Net price (EUR)	0,1189	0,0455	0,0257	0,0212	0,0198

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,8Ohm
Max. drain current:	270mA
Max. power loss:	310mW
Case:	SOT23
Manufacturer:	NXP
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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