2N7002W

Symbol Micros: T2N7002W LGE

322151

T2N7002W LGE

Contractor Symbol:

Case : SOT323

Datasheet

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Transistor N-Channel MOSFET; unipolar; 60V; 50V; 7,5Ohm; 115mA; 225mW; -55°C ~ 150°C; Substitute: 2N7002W-LGE;

Parameters

Open channel resistance:	7,5Ohm
Max. drain current:	115mA
Max. power loss:	225mW
Case:	SOT323
Manufacturer:	LGE
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: LGE Manufacturer part number: 2N7002W RoHS Case style: SOT323 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1329	0,0610	0,0331	0,0249	0,0221

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	7,5Ohm
Max. drain current:	115mA
Max. power loss:	225mW
Case:	SOT323
Manufacturer:	LGE
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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