2SK1119

Symbol Micros: T2SK1119

37366

T2SK1119

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Case : TO220

Datasheet

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N-MOSFET 4A 1000V 100W 1.2Ω

Parameters

Open channel resistance:	3,8Ohm
Max. drain current:	4A
Max. power loss:	100W
Case:	TO220
Manufacturer:	Toshiba
Max. drain-source voltage:	1000V
Max. drain-gate voltage:	1000V

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• Parameters

Open channel resistance:	3,8Ohm
Max. drain current:	4A
Max. power loss:	100W
Case:	TO220
Manufacturer:	Toshiba
Max. drain-source voltage:	1000V
Max. drain-gate voltage:	1000V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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