2SK2615

Symbol Micros: T2SK2615

125834

T2SK2615

Contractor Symbol:

Case : SOT89

Datasheet

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N-MOSFET 2A 60V 500mW 0.3Ω 2SK2615(TE12L,F)

Parameters

Open channel resistance:	440mOhm
Max. drain current:	2A
Max. power loss:	1,5W
Case:	SOT89
Manufacturer:	TOSHIBA
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

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• Parameters

Open channel resistance:	440mOhm
Max. drain current:	2A
Max. power loss:	1,5W
Case:	SOT89
Manufacturer:	TOSHIBA
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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