2SK2963(TE12L,F)

Symbol Micros: T2SK2963

42952

T2SK2963

Contractor Symbol:

Case : SOT89

Datasheet

Technical drawing Add to favourites

N-MOSFET 1A 100V 0.5W 0.5Ω

Parameters

Open channel resistance:	950mOhm
Max. drain current:	1A
Max. power loss:	1,5W
Case:	SOT89
Manufacturer:	TOSHIBA
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

All parameters

Manufacturer:: Toshiba Manufacturer part number: 2SK2963 RoHS Case style: SOT89 Datasheet

In stock:

37 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,2096	0,8479	0,7187	0,6577	0,6365

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	950mOhm
Max. drain current:	1A
Max. power loss:	1,5W
Case:	SOT89
Manufacturer:	TOSHIBA
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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