2SK3564(Q,M) TO220SIS

Symbol Micros: T2SK3564
Contractor Symbol:
Case :  
N-MOSFET 3A 900V 40W 3.7Ω
Parameters
Open channel resistance: 3,7Ohm
Max. drain current: 3A
Max. power loss: 40W
Case: TO220iso
Manufacturer: TOSHIBA
Max. drain-source voltage: 900V
Max. drain-gate voltage: 900V
         
 
Item available on request
Open channel resistance: 3,7Ohm
Max. drain current: 3A
Max. power loss: 40W
Case: TO220iso
Manufacturer: TOSHIBA
Max. drain-source voltage: 900V
Max. drain-gate voltage: 900V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT