2SK3564(Q,M) TO220SIS

Symbol Micros: T2SK3564

42954

T2SK3564

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N-MOSFET 3A 900V 40W 3.7Ω

Parameters

Open channel resistance:	3,7Ohm
Max. drain current:	3A
Max. power loss:	40W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	900V
Max. drain-gate voltage:	900V

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• Parameters

Open channel resistance:	3,7Ohm
Max. drain current:	3A
Max. power loss:	40W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	900V
Max. drain-gate voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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