2SK3565

Symbol Micros: T2SK3565

125833

T2SK3565

Contractor Symbol:

Case : TO220iso

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 900V; 900V; 30V; 2,5Ohm; 5A; 45W; -55°C ~ 150°C; 2SK3565(Q,M), 2SK3565(STA4,Q,M)

Parameters

Open channel resistance:	2,5Ohm
Max. drain current:	5A
Max. power loss:	45W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	900V
Max. drain-gate voltage:	900V

All parameters

Manufacturer:: Toshiba Manufacturer part number: 2SK3565 RoHS Case style: TO220iso Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,5331	1,1687	0,9688	0,8489	0,8065

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,5Ohm
Max. drain current:	5A
Max. power loss:	45W
Case:	TO220iso
Manufacturer:	TOSHIBA
Max. drain-source voltage:	900V
Max. drain-gate voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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