2SK3666-3-TB-E SOT23-3

Symbol Micros: T2SK3666-3-tb-e

298649

T2SK3666-3-tb-e

Contractor Symbol:

Case : SOT23-3

Datasheet

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JFET N-Channel 10mA 200mW Surface Mount 3-CP

Parameters

Open channel resistance:	200Ohm
Max. drain current:	10mA
Max. power loss:	200mW
Case:	SOT23-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: 2SK3666-2-TB-E RoHS Case style: SOT23-3 t/r Datasheet

In stock:

175 pcs.

Quantity of pcs.	3+	10+	50+	250+	1000+
Net price (EUR)	0,3406	0,2229	0,1597	0,1376	0,1308

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Packaging:
250 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	200Ohm
Max. drain current:	10mA
Max. power loss:	200mW
Case:	SOT23-3
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V
Transistor type:	N-JFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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