2SK3666-3-TB-E SOT23-3

Symbol Micros: T2SK3666-3-tb-e
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Case : SOT23-3
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JFET N-Channel 10mA 200mW Surface Mount 3-CP
Parameters
Open channel resistance: 200Ohm
Max. drain current: 10mA
Max. power loss: 200mW
Case: SOT23-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Manufacturer:: ON-Semicoductor Manufacturer part number: 2SK3666-2-TB-E RoHS Case style: SOT23-3 t/r Datasheet
In stock:
225 pcs.
Quantity of pcs. 3+ 10+ 50+ 250+ 1000+
Net price (EUR) 0,3347 0,2191 0,1570 0,1353 0,1286
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Packaging:
250
Open channel resistance: 200Ohm
Max. drain current: 10mA
Max. power loss: 200mW
Case: SOT23-3
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Transistor type: N-JFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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