2SK3878 TOSHIBA
Symbol Micros:
T2SK3878
Case : TO 3P
N-MOSFET 900V 9A 1.3Ω 150W 2SK3878(STA1,E,S)
Parameters
| Open channel resistance: | 1,3Ohm |
| Max. drain current: | 9A |
| Max. power loss: | 150W |
| Case: | TO 3P |
| Manufacturer: | Toshiba |
| Max. drain-source voltage: | 900V |
| Max. drain-gate voltage: | 900V |
Item in delivery
Estimated date:
2024-05-15
Quantity of pcs.: 500
| Open channel resistance: | 1,3Ohm |
| Max. drain current: | 9A |
| Max. power loss: | 150W |
| Case: | TO 3P |
| Manufacturer: | Toshiba |
| Max. drain-source voltage: | 900V |
| Max. drain-gate voltage: | 900V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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