3SK293

Symbol Micros: T3SK293

309282

T3SK293

Contractor Symbol:

Case : 2-2K1B

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 12,5V; 8V; 30mA; 100mW; -55°C ~ 125°C; 3SK293(TE85L,F)

Parameters

Max. drain current:	30mA
Max. power loss:	100mW
Case:	2-2K1B
Manufacturer:	TOSHIBA
Max. drain-source voltage:	12,5V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: Toshiba Manufacturer part number: 3SK293 (TE85L,F) RoHS Case style: 2-2K1B Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,4823	0,2671	0,2111	0,1991	0,1927

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Max. drain current:	30mA
Max. power loss:	100mW
Case:	2-2K1B
Manufacturer:	TOSHIBA
Max. drain-source voltage:	12,5V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 125°C
Mounting:	SMD

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