5N20A Goford Semiconductor

Symbol Micros: T5N20A

390779

T5N20A

Contractor Symbol:

Case : TO252

Datasheet

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200V 5A 78W 580mOhm 1.55V 1 N-channel TO-251(IPAK) MOSFETs ROHS Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	580mOhm
Max. drain current:	5A
Max. power loss:	78W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	580mOhm
Max. drain current:	5A
Max. power loss:	78W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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