MOT65R850F TO-220F MOT

Symbol Micros: T65R850F MOT

529725

T65R850F MOT

Contractor Symbol:

Case : TO220iso

Technical drawing Add to favourites

650V 4A 20W 850mOhm@10V, TO-220F Single FETs, MOSFETs ROHS ; SUPER JUNCTION N-CHANNEL MOSFET ODPOWIEDNIK: ONSEMI FCPF850N65Z;

Parameters

Open channel resistance:	850mOhm
Max. drain current:	4A
Max. power loss:	20W
Case:	TO220iso
Manufacturer:	MOT
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: MOT Manufacturer part number: MOT65R850F RoHS Case style: TO220iso  

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7240	0,4584	0,3620	0,3291	0,3150

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Packaging:
50/200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	850mOhm
Max. drain current:	4A
Max. power loss:	20W
Case:	TO220iso
Manufacturer:	MOT
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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