AO3407 HXY MOSFET

Symbol Micros: TAO3407 HXY
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Case : SOT23
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Transistor P-Channel MOSFET; 30V; 20V; 98mOhm; 4,1A; 1,32W; -55°C ~ 150°C; Equivalent: AO3407 Alpha&Omega Semiconductor AOS;
Parameters
Open channel resistance: 98mOhm
Max. drain current: 4,1A
Max. power loss: 1,32W
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
         
 
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Estimated date:
2025-11-07
Quantity of pcs.: 3000
Open channel resistance: 98mOhm
Max. drain current: 4,1A
Max. power loss: 1,32W
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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