AO3409A 

Symbol Micros: TAO3409a c

501773

TAO3409a c

Contractor Symbol:

Case : SOT23

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Transistor P-Channel MOSFET; 30V; 20V; 200mOhm; 2,6A; 1,4W; -55°C ~ 150°C; Equivalent: AO3409 Alpha&Omega Semiconductor AOS;

Parameters

Open channel resistance:	200mOhm
Max. drain current:	2,6A
Max. power loss:	1,4W
Case:	SOT23
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V

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Estimated date:
2026-12-31

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	200mOhm
Max. drain current:	2,6A
Max. power loss:	1,4W
Case:	SOT23
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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