AO3419 HXY MOSFET

Symbol Micros: TAO3419 HXY
Contractor Symbol:
Case : SOT23
Transistor P-Channel MOSFET; 20V; 10V; 60mOhm; 4,1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3419 Alpha&Omega Semiconductor AOS;
Parameters
Open channel resistance: 60mOhm
Max. drain current: 4,1A
Max. power loss: 1,4W
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: AO3419 RoHS Case style: SOT23t/r Datasheet
In stock:
1000 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 5000+
Net price (EUR) 0,1678 0,0671 0,0390 0,0326 0,0305
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Packaging:
1000
Open channel resistance: 60mOhm
Max. drain current: 4,1A
Max. power loss: 1,4W
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD