AO3419 HXY MOSFET
Symbol Micros:
TAO3419 HXY
Case : SOT23
Transistor P-Channel MOSFET; 20V; 10V; 60mOhm; 4,1A; 1,4W; -55°C ~ 150°C; Equivalent: AO3419 Alpha&Omega Semiconductor AOS;
Parameters
| Open channel resistance: | 60mOhm |
| Max. drain current: | 4,1A |
| Max. power loss: | 1,4W |
| Case: | SOT23 |
| Manufacturer: | HXY MOSFET |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Open channel resistance: | 60mOhm |
| Max. drain current: | 4,1A |
| Max. power loss: | 1,4W |
| Case: | SOT23 |
| Manufacturer: | HXY MOSFET |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 10V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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