18N20

Symbol Micros: TAOD2210 GO

397016

TAOD2210 GO

Contractor Symbol:

Case : TO252

Datasheet

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Transistor MOSFET; N-Channel; TO252-2(DPAK); 200V; 18A; 65.8W; 160mΩ@10V,9A; 3V@250uA AOD2210;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	18A
Max. power loss:	65,8W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	18A
Max. power loss:	65,8W
Case:	TO252
Manufacturer:	GOFORD
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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