AOD4130

Symbol Micros: TAOD4130 c
Contractor Symbol:
Case : TO252 (DPACK) t/r
Transistor N-Channel MOSFET; 60V; 20V; 38mOhm; 30A; 34,7W; -55°C~150°C; AOD4130; AOD4130-HXY; AOD4130-MS; AOD4130-VB;
Parameters
Open channel resistance: 38mOhm
Max. drain current: 30A
Max. power loss: 34,7W
Case: TO252 (DPACK) t/r
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: HXY Manufacturer part number: AOD4130-HXY RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 40+ 150+ 600+
Net price (EUR) 0,4696 0,2822 0,2223 0,1983 0,1876
Add to comparison tool
Packaging:
150
Open channel resistance: 38mOhm
Max. drain current: 30A
Max. power loss: 34,7W
Case: TO252 (DPACK) t/r
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD